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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Self-Assembled Porphyrins on Modified Zinc Oxide Nanorods: Development of Model Systems for Inorganic-Organic Semiconductor Interface Studies
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Self-Assembled Porphyrins on Modified Zinc Oxide Nanorods: Development of Model Systems for Inorganic-Organic Semiconductor Interface Studies

机译:修饰的氧化锌纳米棒上的自组装卟啉:无机有机半导体界面研究模型系统的开发

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摘要

Dense arrays of zinc oxide nanorods with high specific surface areas were grown by hydrothermal method and functionalized by self-assembled monolayer (SAM) of porphyrins. The growth process was optimized to obtain dense arrays of nanorods with diameter of 60—80 nm and length up to 1.5 μm. The increase in the effective surface area was monitored by comparing the absorbances of SAM deposited both on the flat and nanorod surfaces of ZnO. To alter further semiconductor-organic SAM interactions, a 2 or 5 nm thick layer of either Al2O3 or TiO2 was deposited on the ZnO nanorods. The present results show that both carboxylic acid and triethoxysilane anchors can be used to form porphyrin SAMs on the studied metal oxide substrates, and the electronic interactions between the metal oxide and porphyrin SAM are strongly modified by a thin layer of Al2O3 or TiO2. These hybrid semiconductor-organic SAM constructions present promising model systems for advanced spectroscopy studies of semiconductor-organic interfaces with high degree of control over electronic interactions and system morphology.
机译:通过水热法生长具有高比表面积的氧化锌纳米棒的致密阵列,并通过卟啉的自组装单分子层(SAM)进行功能化。优化了生长过程以获得直径为60-80 nm,长度最大为1.5μm的纳米棒的致密阵列。通过比较沉积在ZnO平面和纳米棒表面上的SAM的吸光度来监控有效表面积的增加。为了进一步改变半导体-有机SAM相互作用,在ZnO纳米棒上沉积了2或5 nm厚的Al2O3或TiO2层。目前的结果表明,羧酸和三乙氧基硅烷均可以用于在所研究的金属氧化物基底上形成卟啉SAM,并且金属氧化物和卟啉SAM之间的电子相互作用被Al2O3或TiO2的薄层强烈地改性。这些混合的半导体-有机SAM结构为半导体-有机界面的高级光谱研究提供了有前途的模型系统,并具有对电子相互作用和系统形态的高度控制。

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