首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Electrons in the Band Gap: Spectroscopic Characterization of Anatase TiO2 Nanocrystal Electrodes under Fermi Level Control
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Electrons in the Band Gap: Spectroscopic Characterization of Anatase TiO2 Nanocrystal Electrodes under Fermi Level Control

机译:带隙中的电子:费米能级控制下锐钛矿型TiO2纳米晶体电极的光谱表征

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Macroscopic properties of semiconductor nanoparticle networks in functional devices strongly depend on the electronic structure of the material. Analytical methods allowing for the characterization of the electronic structure in situ, i.e., in the presence of an application-relevant medium, are therefore highly desirable. Here, we present the first spectral data obtained under Fermi level control of electrons accumulated in anatase TiO2 electrodes in the energy range from the MIR to the UV (0.1-33 eV). Band gap states were electrochemically populated in mesoporous TiO2 films incontact with an aqueous electrolyte. The combination of electrochemical and spectroscopic measurements allows us for the first time to determine both the energetic location of the electronic ground states as well as the energies of the associated optical transitions in the energetic range between the fundamental absorption threshold and the onset of lattice absorption. On the basis of our observations, we attribute spectral contributions in the vis/NIR to d-d transitions of Ti~(3+) species and a broad MIR absorption, monotonically increasing toward lower wavenumbers, to a quasi-delocalization of electrons. Importantly, signal intensities in the vis/NIR and MIR are linearly correlated. Absorbance and extractable charge show the same exponential dependence on electrode potential. Our results demonstrate that signals in the vis/NIR and MIR are associated with an exponential distribution of band gap states.
机译:功能器件中的半导体纳米粒子网络的宏观特性在很大程度上取决于材料的电子结构。因此,非常需要允许原位表征电子结构的分析方法,即在存在与应用相关的介质的情况下。在这里,我们介绍在费米能级控制下,在从MIR到UV(0.1-33 eV)的能量范围内,锐钛矿型TiO2电极中积累的电子的第一光谱数据。带隙态被电化学填充在与水性电解质接触的中孔TiO2膜中。电化学和光谱测量的结合使我们首次确定了电子基态的高能位置以及在基本吸收阈值和晶格吸收开始之间的高能范围内相关的光学跃迁的能量。根据我们的观察,我们将在vis / NIR中的光谱贡献归因于Ti〜(3+)物种的d-d跃迁和较宽的MIR吸收(向较低波数单调增加)归因于电子的准离域化。重要的是,vis / NIR和MIR中的信号强度线性相关。吸光度和可提取电荷对电极电势显示出相同的指数依赖性。我们的结果表明,vis / NIR和MIR中的信号与带隙状态的指数分布相关。

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