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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Direct Imaging of Hydrogen Bond Formation in Dissociative Adsorption of Glycine on Si(111)7x7 by Scanning Tunneling Microscopy
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Direct Imaging of Hydrogen Bond Formation in Dissociative Adsorption of Glycine on Si(111)7x7 by Scanning Tunneling Microscopy

机译:扫描隧道显微镜直接成像中甘氨酸在Si(111)7x7上的解离吸附中氢键形成的直接成像

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Adsorption of glycine on a Si(111)7X7 surface at room temperature has been studied by scanning tunneling microscopy (STM). The observed STM images provide strong evidence for dissociative adsorption of glycine through N-H bond cleavage (and N-Si bond formation) as reported in our recent X-ray photoemission study. In particular, the dissociated H atom is found to anchor on a restatom while the N-H dissociated glycine molecule adsorbs on an adatom in a tilted,unidentate geometry. STM study for higher exposures further reveals that the second adlayer is mediated by vertical hydrogen bonding, in excellent accord with our recent X-ray photoemission results. In addition to this vertical hydrogen bonding between a glycine molecule and the N-H dissociated glycine adsorbate, we also observe horizontal hydrogen bonding, not seen before, between two N-H dissociated glycine adsorbates at two neighboring adatom sites. These hydrogen-bonded adstructures, as implicated in the STM images, have been corroborated with our computational DFT/B3LYP/6-31++(d,p) results by using the two largest model surfaces: a Si_(16)H_(18) cluster to simulate an adatom-restatom pair and a Si_(26)H_(24) cluster to model a double adatom-adatom pair across the dimer wall of the 7X7 surface. Furthermore, statistical analysis of the STM images for different exposures shows that the center adatom is more reactive than the corner adatom and that the faulted half is more reactive than the unfaulted half. The horizontal hydrogen bonding appears to be favored at a lower exposure than the vertical hydrogen bonding, which becomes dominant at a higher exposure as formation of the second adlayer proceeds. The present work illustrates the importance of hydrogen bonding in the early growth and site-specific chemistry of glycine on Si(111)7X7 surfaces.
机译:通过扫描隧道显微镜(STM)研究了室温下甘氨酸在Si(111)7X7表面的吸附。正如我们最近的X射线光发射研究所报道的那样,观察到的STM图像为甘氨酸通过N-H键裂解(和N-Si键形成)的解离吸附提供了有力的证据。特别地,发现解离的H原子锚定在重原子上,而N-H解离的甘氨酸分子以倾斜的,不相同的几何形状吸附在负原子上。 STM研究表明,第二层是由垂直氢键介导的,这与我们最近的X射线光发射结果非常吻合。除了甘氨酸分子与N-H离解的甘氨酸吸附物之间的垂直氢键外,我们还观察到两个相邻的吸附原子位点的两个N-H离解的甘氨酸吸附物之间的水平氢键,这是以前所未见的。通过使用两个最大的模型表面,我们的DFT / B3LYP / 6-31 ++(d,p)计算结果证实了STM图像中暗示的这些氢键结合的结构:Si_(16)H_(18 )簇模拟一个adatom-restatom对和一个Si_(26)H_(24)簇来模拟一个横跨7X7表面的二聚体壁的双adatom-adatom对。此外,对不同曝光的STM图像的统计分析表明,中心原子比角原子更易反应,断层的一半比未断层的更活跃。相比于垂直氢键,水平氢键似乎在较低的暴露条件下更受青睐,而垂直氢键在第二暴露层的形成继续进行时,在较高的暴露度下占主导地位。本工作说明了在Si(111)7X7表面上甘氨酸的早期生长和位点特异性化学中氢键的重要性。

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