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Device Physics and Operation of Lateral Bulk Heterojunction Devices

机译:侧向体异质结器件的器件物理和操作

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摘要

Measurements of lateral bulk heterojunction (BHJ) devices have recently been reported as a means to characterize charge transport and recombination properties within organic photovoltaic (OPV) materials. These structures allow for the direct measurement of the lateral extents of the space charge regions, potential and electric field profiles, current versus voltage characteristics, and other physical and chemical properties. This article describes numerical simulations that show three different transport regimes present within lateral BHJ devices and two different experimental methods, which verify those findings. These measurement techniques utilize typical confocal microscopy tools as well as steady-state current versus voltage measurements on high aspect ratio nanofabricated structures in order to probe the material properties between the electrodes. Experimental results show that the lateral extents of space charge regions within these devices are approximately 1—5 μm, which are related to the drift lengths of the charge carriers, and that the mechanism of bimolecular recombination is shown to be a bulk material property. The results within this article describe a series of methods to evaluate charge transport and recombination along the in-plane direction in BHJ films and provide complementary insights to those obtained from vertical-device-based measurements.
机译:最近已经报道了对横向本体异质结(BHJ)器件的测量,作为表征有机光伏(OPV)材料中电荷传输和复合特性的一种手段。这些结构允许直接测量空间电荷区域的横向范围,电势和电场分布,电流与电压的特性以及其他物理和化学特性。本文介绍了数值模拟,该数值模拟显示了在侧面BHJ设备中存在的三种不同的传输方式以及两种不同的实验方法,这证实了这些发现。这些测量技术利用典型的共聚焦显微镜工具以及在高纵横比的纳米结构上进行稳态电流与电压的测量,以探测电极之间的材料特性。实验结果表明,这些器件中空间电荷区域的横向范围约为1-5μm,这与电荷载流子的漂移长度有关,并且表明双分子重组的机理是一种本体材料性质。本文中的结果描述了评估BHJ膜中沿面内方向的电荷传输和复合的一系列方法,并为从基于垂直设备的测量中获得的信息提供了补充见解。

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