首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Correlation of the number of thiophene units with structural order and carrier mobility in unsubstituted even- and odd-numbered alpha-oligothiophene films
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Correlation of the number of thiophene units with structural order and carrier mobility in unsubstituted even- and odd-numbered alpha-oligothiophene films

机译:未取代的偶数和奇数α-低聚噻吩薄膜中噻吩单元数与结构顺序和载流子迁移率的相关性

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摘要

We investigate the correlation of the number of thiophene units with the structural order and carrier mobility of the films through studies on thin-film transistors (TFTs) based on alpha-quinquethiophene (5T), alpha-sexithiophene (6T), and alpha-septithiophene (7T). The X-ray diffraction (XRD) data of the nT films deposited at low substrate temperatures present obviously different structural orders depending on the parity of the number of thiophene units. Although even-numbered nT films present well-ordered structures and large carrier mobilities, odd-numbered nT films present two different crystalline polymorphs and vastly low carrier mobilities reflecting the coexistence of two crystalline polymorphs. However, the XRD data of both even- and odd-numbered nT films deposited at high substrate temperatures indicate that the nT molecules form single well-ordered structures. Those ordered TFTs exhibit large carrier mobilities accompanying an increase in the number of thiophene units, 0.05, 0.08, and 0.13 cm(2) V-1 s(-1) for 5T, 6T, and 7T, respectively. The parity of the number of thiophene units affects the structural order intrinsically in grown thin films, and affects carrier mobilities extrinsically in their TFTs.
机译:我们通过基于α-喹啉噻吩(5T),α-sexithiophene(6T)和α-septithiophene的薄膜晶体管(TFT)的研究,研究了噻吩单元数与薄膜的结构顺序和载流子迁移率的相关性(7T)。在低衬底温度下沉积的nT薄膜的X射线衍射(XRD)数据显示出明显不同的结构顺序,具体取决于噻吩单元数的奇偶性。尽管偶数nT膜具有良好的结构排列和较大的载流子迁移率,但奇数nT膜具有两种不同的结晶多晶型物和极低的载流子迁移率,反映了两种结晶多晶型物的共存。然而,在较高的衬底温度下沉积的偶数和奇数nT薄膜的XRD数据表明,nT分子形成了单一的有序结构。这些有序的TFT表现出较大的载流子迁移率,并伴随着噻吩单元数量的增加,分别对于5T,6T和7T为0.05、0.08和0.13 cm(2)V-1 s(-1)。噻吩单元数目的奇偶性本质上影响生长的薄膜中的结构顺序,并固有地影响其TFT中的载流子迁移率。

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