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Fabrication of Single-Crystalline Semiconductor CdS Nanobelts by Vapor Transport

机译:气相传输法制备单晶半导体CdS纳米带

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A beltlike single-crystalline CdS nanostructure was successfully synthesized by vapor-phase transport of the desired commercial CdS powder at 850 deg C.Its morphology and microstructures were determined by X-ray powder diffraction,scanning electron microscopy,and transmission electron microscopy.The observations reveal that the products consist of a large quantity of beltlike nanostructures with typical lengths in the range of several tens to several hundreds of micrometers.The typical widths of CdS nanobelts range from several tens to several hundreds of nanometers.The as-synthesized semiconductor CdS nanobelts are pure,structurally uniform,and single crystalline.CdS nanobelts,which have a rectangle-like cross section,could be an ideal system for building nanometer-scale optoelectronic devices along individual nanobelts,such as laser light-emitting diodes and optical devices.
机译:通过在850℃下气相输送所需的CdS粉末成功地合成了带状单晶CdS纳米结构。通过X射线粉末衍射,扫描电子显微镜和透射电子显微镜确定了其形态和微观结构。揭示了产品由大量带状纳米结构组成,典型长度在几十到几百微米之间.CdS纳米带的典型宽度在几十到几百纳米之间。 CdS纳米带具有矩形横截面,是沿单个纳米带构建纳米级光电器件(如激光发光二极管和光学器件)的理想系统。

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