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Effects of guest atomic species on the lattice thermal conductivity of type-I silicon clathrate studied via classical molecular dynamics

机译:通过经典分子动力学研究来宾原子种类对I型硅包合物晶格热导率的影响

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摘要

The effects of guest atomic species in Si clathrates on the lattice thermal conductivity were studied using classical molecular dynamics calculations. The interaction between a host atom and a guest atom was described by the Morse potential function while that between host atoms was described by the Tersoff potential. The parameters of the potentials were newly determined for this study such that the potential curves obtained from first-principles calculations for the insertion of a guest atom into a Si cage were successfully reproduced. The lattice thermal conductivities were calculated by using the Green-Kubo method. The experimental lattice thermal conductivity of Ba8Ga16Si30 can be successfully reproduced using the method. As a result, the lattice thermal conductivities of type-I Si clathrates, M8Si46 (M = Na, Mg, K, Ca Rb, Sr, Cs, or Ba), were obtained. It is found that the lattice thermal conductivities of M8Si46, where M is IIA elements (i.e., M = Mg, Ca, Sr, or Ba) tend to be lower than those of M8Si46, where M is IA elements (i.e., M = Na, K, Rb, or Cs). Those of (M8Si46)-M-m, where m was artificially modified atomic weight were also obtained. The obtained lattice thermal conductivity can be regarded as a function of a characteristic frequency, f(c). That indicates minimum values around f(c)=2-4 THz, which corresponds to the center of the frequencies of the transverse acoustic phonon modes associated with Si cages. Published by AIP Publishing.
机译:使用经典的分子动力学计算研究了硅包合物中客体原子种类对晶格热导率的影响。主体原子与客体原子之间的相互作用由莫尔斯电势函数描述,而主体原子之间的相互作用由Tersoff势函数描述。为这项研究新确定了电势参数,从而成功复制了从第一性原理计算获得的将客体原子插入Si笼的电势曲线。通过使用Green-Kubo方法来计算晶格热导率。使用该方法可以成功地再现Ba8Ga16Si30的实验晶格热导率。结果,获得了I型Si笼形物M8Si46(M = Na,Mg,K,Ca Rb,Sr,Cs或Ba)的晶格热导率。发现M8Si46的晶格热导率倾向于低于M8Si46的晶格热导率,其中M为IIA元素(即M = Mg,Ca,Sr或Ba) ,K,Rb或Cs)。还获得了(M8Si46)-M-m的那些,其中m是人为修饰的原子量。所获得的晶格热导率可以视为特征频率f(c)的函数。这表明在f(c)= 2-4 THz附近的最小值,该最小值对应于与Si笼子相关的横向声子声子模的频率中心。由AIP Publishing发布。

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