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首页> 外文期刊>The Journal of Chemical Physics >Asymmetric Coulomb fluids at randomly charged dielectric interfaces: Anti-fragility, overcharging and charge inversion
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Asymmetric Coulomb fluids at randomly charged dielectric interfaces: Anti-fragility, overcharging and charge inversion

机译:随机带电介电界面上的非对称库仑流体:抗脆性,过度充电和电荷反转

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We study the distribution of multivalent counterions next to a dielectric slab, bearing a quenched, random distribution of charges on one of its solution interfaces, with a given mean and variance, both in the absence and in the presence of a bathing monovalent salt solution. We use the previously derived approach based on the dressed multivalent-ion theory that combines aspects of the strong and weak coupling of multivalent and monovalent ions in a single framework. The presence of quenched charge disorder on the charged surface of the dielectric slab is shown to substantially increase the density of multivalent counterions in its vicinity. In the counterion-only model (with no monovalent salt ions), the surface disorder generates an additional logarithmic attraction potential and thus an algebraically singular counterion density profile at the surface. This behavior persists also in the presence of a monovalent salt bath and results in significant violation of the contact-value theorem, reflecting the anti-fragility effects of the disorder that drive the system towards a more "ordered" state. In the presence of an interfacial dielectric discontinuity, depleting the counterion layer at the surface, the charge disorder still generates a much enhanced counterion density further away from the surface. Likewise, the charge inversion and/or overcharging of the surface occur more strongly and at smaller bulk concentrations of multivalent counterions when the surface carries quenched charge disorder. Overall, the presence of quenched surface charge disorder leads to sizable effects in the distribution of multivalent counterions in a wide range of realistic parameters and typically within a distance of a few nanometers from the charged surface. (C) 2014 AIP Publishing LLC.
机译:我们研究了在不存在和存在沐浴一价盐溶液的情况下,多价抗衡离子在电介质平板旁边的分布,该电荷在其溶液界面之一上带有猝灭的随机电荷分布,具有给定的均值和方差。我们使用基于修饰的多价离子理论的先前派生方法,该方法在单个框架中结合了多价和单价离子强弱耦合的各个方面。介电板带电表面上存在淬灭的电荷无序现象,显示其实质上增加了其附近多价抗衡离子的密度。在仅抗衡离子的模型中(没有一价盐离子),表面无序会产生额外的对数吸引势,从而在表面产生代数奇异的抗衡离子密度分布。在存在一价盐浴的情况下,这种行为也会持续存在,并导致严重违反接触值定理,从而反映出将系统带向更“有序”状态的疾病的抗衰老作用。在存在界面介电不连续性的情况下,耗尽了表面的抗衡离子层时,电荷无序现象仍然在远离表面的地方产生了大大增强的抗衡离子密度。同样,当表面带有淬灭的电荷紊乱时,表面的电荷反转和/或过度充电会更强烈地发生,并且多价抗衡离子的体积浓度较小。总体而言,淬灭的表面电荷无序的存在会导致多价抗衡离子在广泛的实际参数范围内且通常在距带电表面几纳米的距离内分布时产生可观的影响。 (C)2014 AIP Publishing LLC。

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