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Kinetics of the sulfur oxidation on palladium: A combined in situ x-ray photoelectron spectroscopy and density-functional study

机译:钯上硫氧化的动力学:原位X射线光电子能谱和密度泛函研究

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We studied the reaction kinetics of sulfur oxidation on the Pd(100) surface by in situ high resolution x-ray photoelectron spectroscopy and ab initio density functional calculations. Isothermal oxidation experiments were performed between 400 and 500 K for small amounts (~0.02 ML) of preadsorbed sulfur, with oxygen in large excess. The main stable reaction intermediate found on the surface is SO _4, with SO _2 and SO _3 being only present in minor amounts. Density-functional calculations depict a reaction energy profile, which explains the sequential formation of SO _2, SO _3, and eventually SO 4, also highlighting that the in-plane formation of SO from S and O adatoms is the rate limiting step. From the experiments we determined the activation energy of the rate limiting step to be 85 6 kJ mol ~(-1) by Arrhenius analysis, matching the calculated endothermicity of the SO formation.
机译:我们通过原位高分辨率x射线光电子能谱和从头算密度函数计算研究了Pd(100)表面硫氧化的反应动力学。在400至500 K之间进行了等温氧化实验,以处理少量(〜0.02 ML)的预吸附硫,其中大量过量的氧气。在表面上发现的主要稳定反应中间体为SO _4,其中SO _2和SO _3仅少量存在。密度泛函计算描述了反应能曲线,这解释了SO _2,SO _3以及最终SO 4的顺序形成,还强调了由S和O原子构成的SO的面内形成是限速步骤。从实验中,我们通过Arrhenius分析确定了限速步骤的活化能为85 6 kJ mol〜(-1),与计算得出的SO吸热率相匹配。

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