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首页> 外文期刊>The Journal of Chemical Physics >Langevin dynamics simulations of ds-DNA translocation through synthetic nanopores
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Langevin dynamics simulations of ds-DNA translocation through synthetic nanopores

机译:Langevin通过合成纳米孔进行ds-DNA易位的动力学模拟

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We have implemented a coarse-grained model to study voltage-driven as-DNA translocation through nanopores located in synthetic membranes. The simulated trajectory of the DNA through the nanopores was calculated using Langevin dynamics. We present the results based on more than 120 000 individual translocations. We are particularly interested in this work in probing the physical basis of various experimentally observed-yet poorly understood-phenomena. Notably, we observe in our simulations the formation of ds-DNA hairpins, widely suspected to be the basis for quantized blockage. We study the translocation time, a measurable quantity crucially important in polyelectrolyte characterization, as a function of hairpin vertex location along the polymer backbone, finding that this behavior can be tuned to some degree by simulation parameters. We also study the voltage dependence of the tendency of hairpins to serve as the initiators of translocation events. Surprisingly, we find that the resulting probability depends vitally upon whether the events counted are ultimately successful or not. Further details lead us to propose that failed attempts in experimental translocation studies may be more common-and deceptive-than is generally recognized. We find the time taken by successful single file translocations to be directly proportional to the ratio of chain length to the applied voltage. Finally, we address a common yet puzzling phenomenon in translocation experiments: translocation events in which the current through the pore is highly, yet incompletely, blocked. We present the findings that offer a new explanation for such events.
机译:我们已经实现了粗粒度模型,以研究电压驱动的as-DNA通过位于合成膜中的纳米孔的转运。通过兰格文动力学计算通过纳米孔的DNA的模拟轨迹。我们基于12万多个个体易位提出了结果。我们对这项工作特别感兴趣,以探究各种通过实验观察到的尚未理解的现象的物理基础。值得注意的是,我们在模拟中观察到了ds-DNA发夹的形成,人们普遍认为这是定量阻断的基础。我们研究了转位时间(在聚电解质表征中至关重要的可测量量),其是发夹顶点沿聚合物主链位置的函数,发现这种行为可以通过仿真参数进行一定程度的调整。我们还研究了发夹趋向于作为易位事件引发剂的电压依赖性。出乎意料的是,我们发现所产生的概率在很大程度上取决于所计数事件是否最终成功。进一步的细节使我们提出,在实验性易位研究中失败的尝试可能比普遍公认的更为普遍和具有欺骗性。我们发现成功完成单个文件移位所需的时间与链长与施加电压的比率成正比。最后,我们解决了易位实验中一个常见但令人困惑的现象:易位事件,其中通过孔的电流被高度(但不完全)阻塞。我们提出的发现为此类事件提供了新的解释。

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