首页> 外文期刊>The Journal of Chemical Physics >Ab initio study of structural and electronic properties of SrTiO_3(001)oxygen-vacancy surfaces
【24h】

Ab initio study of structural and electronic properties of SrTiO_3(001)oxygen-vacancy surfaces

机译:从头开始研究SrTiO_3(001)氧空位表面的结构和电子性质

获取原文
获取原文并翻译 | 示例
       

摘要

First-principles calculations are employed to study the surface relaxation and electronic structure of the fully relaxed SrTiO_3(001)oxygen-vacancy surfaces with both Sr and Ti terminations.In contrast to the perfect surface,the larger surface rumples and smaller interlayer distances have been found.Some in-gap Ti 3d states at about-1.13 eV below the Fermi level were observed in the Ti-terminated surface caused by oxygen vacancies.For the Sr-terminated oxygen-vacancy surface,some in-gap Ti 3d states move into the bulk midgap region to become partially occupied.These theoretical results are in agreement with the experimental data.
机译:第一性原理计算用于研究具有Sr和Ti端接的完全弛豫的SrTiO_3(001)氧空位表面的表面弛豫和电子结构。与理想表面相比,较大的表面波纹和较小的层间距离在由氧空位引起的Ti端接表面中,观察到一些在Fermi能级以下约1.13 eV的空位Ti 3d态。对于Sr端接的氧空位表面,一些In-gap Ti 3d态进入这些理论结果与实验数据吻合。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号