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首页> 外文期刊>The Journal of Chemical Physics >Hydrostatic-pressure-induced porous gallium nitride from nanotube bundles:An ab initio study
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Hydrostatic-pressure-induced porous gallium nitride from nanotube bundles:An ab initio study

机译:纳米管束静水压诱导的多孔氮化镓的从头算研究

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Ab initio calculations show that (5,5) and (6,6) single-walled gallium nitride nanotubes (GaN NTs) in bundles could aggregate spontaneously to form new condensed phases when bundled tubes are close enough under hydrostatic pressure.The new GaN phases have typical porous structures,constructed by alternating tetragons and hexagons around the original tube walls.Owing to the different compatibilities of the chirality of the tube with the symmetry of the array,the new phase formed from (5,5) GaN NT bundles is triclinic and that from (6,6) ones is hexagonal.These porous GaN phases possess tetrahedral bonding corresponding to sp~3 hybridization,different from sp hybridized bonding in individual GaN NTs.The interaction between tubes not only controls the structural transformation but also influences the electronic structure of porous GaN.We expect that the two-dimensional-channeled porous structure of GaN is advantageous for the usage of GaN as the molecular sieve and as the excellent dilute magnetic semiconductor by considerable magnetic doping.
机译:从头算计算表明,当束管在静水压力下足够近时,束中的(5,5)和(6,6)单壁氮化镓纳米管(GaN NTs)可以自发聚集形成新的冷凝相。具有典型的多孔结构,由原始管壁周围的四边形和六边形交替构成。由于管的手性与阵列对称性的不同相容性,由(5,5)GaN NT束形成的新相是三斜晶的这些(6,6)中的孔是六角形的。这些多孔的GaN相具有对应于sp〜3杂化的四面体键合,不同于各个GaN NTs中的sp杂化键合。管之间的相互作用不仅控制结构转变,而且影响结构。我们期望GaN的二维通道多孔结构有利于将GaN用作分子筛和优异的稀释剂磁性半导体通过大量的磁性掺杂。

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