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首页> 外文期刊>The Journal of Chemical Physics >Evaluation of the computational methods for electron-impact total ionization cross sections: Fluoromethanes as benchmarks
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Evaluation of the computational methods for electron-impact total ionization cross sections: Fluoromethanes as benchmarks

机译:电子碰撞总电离截面计算方法的评估:以氟甲烷为基准

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摘要

The experimental electron-impact total ionization cross sections (TICSs, ICSs) of CF_4, CHF_3, CH_2F_2, and CH_3F fluoromethanes reported so far and a new set of data obtained with a linear double focusing time-of-flight mass spectrometer have been compared with the ab initio and (semi)empirical based ICS available methods. TICSs computational methods include: two approximations of the binary-encounter dipole (BED) referred to hereafter as Kim(Kim-BEB) and Khare (Khare-BEB) methods, the Deutsch and Mark (DM0 formalism, also requiring atomic and molecular ab initio information, the modified additivity rule (MAR), and the Harland and Vallance (HV) methods, both based on semiempirical or empirical correlations. The molecular ab initio information required by the Kim, Khare, and DM methods has been computed at a variety of quantum chemistry levels, with and without electron correlation and a comprehensive series of basis sets. The general conclusions are summarized as follows: the Kim method yields TICS in excellent agreement with the experimental method; the Khare method provides TICS very close to that of Kim at low electron-impact energies (< 100 eV), but their Mott and Bethe contributions are noticeably different; in the Kim and Khare approximations the electron correlation methods improve the fittings to the experimental profiles in contrast with the large basis sets, that leads to poorer results; the DM formalism yields TICS profiles with shapes similar to the experimental and the BEB methods, but consistently lower and with the profiles maxima shifted towards lower incident electron energies; the MAR method supplies very good ICS profiles, between those of BEB and DM methods; finally, the empirical HV method provides rather poor fittings concomitant with the simplicity and the few empirical parameters used.
机译:到目前为止,已报告了CF_4,CHF_3,CH_2F_2和CH_3F氟甲烷的实验性电子碰撞总电离截面(TICSs,ICSs),并与线性双聚焦飞行时间质谱仪获得的一组新数据进行了比较。从头开始和(半)基于经验的ICS可用方法。 TICS的计算方法包括:二值偶极子(BED)的两种近似,以下称为Kim(Kim-BEB)和Khare(Khare-BEB)方法,Deutsch和Mark(DM0形式主义),也需要原子和分子从头算起信息,修正的加性规则(MAR)以及Harland和Vallance(HV)方法(均基于半经验或经验相关性),Kim,Khare和DM方法所需的分子从头算信息已经在多种计算方法下进行了计算。量子化学能级,具有和不具有电子相关性,以及一系列综合的基集,总的结论总结如下:Kim方法产生的TICS与实验方法非常吻合; Khare方法提供的TICS非常接近Kim。低电子冲击能量(<100 eV),但它们的Mott和Bethe贡献明显不同;在Kim和Khare近似中,电子相关方法将拟合提高到与较大的基础集相比,实验配置文件导致结果较差; DM形式主义产生的TICS轮廓具有与实验和BEB方法相似的形状,但始终较低,并且轮廓最大移向较低的入射电子能量。 MAR方法在BEB和DM方法之间提供了非常好的ICS配置文件;最后,经验HV方法与简单性和所使用的少数经验参数相伴提供了较差的拟合。

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