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Influence of a falling edge on high power microwave pulse combination

机译:下降沿对高功率微波脉冲组合的影响

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This paper presents an explanation of the influence of a microwave falling edge on high-power microwave pulse combination. Through particle-in-cell simulations, we discover that the falling edge is the driving factor that limits the output power of the combined pulses. We demonstrate that the space charge field, which accumulates to become comparable to the E-field at the falling edge of the former pulse, will trap the electrons in the gas layer and decrease its energy to attain a high ionization rate. Hence, avalanche discharge, caused by trapped electrons, makes the plasma density to approach the critical density and cuts off the latter microwave pulse. An X-band combination experiment is conducted with different pulse intervals. This experiment confirms that the high density plasma induced by the falling edge can cut off the latter pulse, and that the time required for plasma recombination in the transmission channel is several microseconds. To ensure a high output power for combined pulses, the latter pulse should be moved ahead of the falling edge of the former one, and consequently, a beat wave with high peak power becomes the output by adding two pulses with normal amplitudes. Published by AIP Publishing.
机译:本文介绍了微波下降沿对高功率微波脉冲组合的影响。通过细胞内颗粒模拟,我们发现下降沿是限制组合脉冲输出功率的驱动因素。我们证明,在前一个脉冲的下降沿处积累起来变得与E场相当的空间电荷场,将把电子俘获在气体层中并降低其能量以实现高电离率。因此,由捕获的电子引起的雪崩放电使等离子体密度接近临界密度,并切断了后者的微波脉冲。用不同的脉冲间隔进行X波段组合实验。该实验证实,由下降沿引起的高密度等离子体可以切断后一个脉冲,并且在传输通道中进行等离子体重组所需的时间为几微秒。为了确保组合脉冲具有较高的输出功率,应将后一个脉冲移到前一个脉冲的下降沿之前,因此,通过将两个具有正常幅度的脉冲相加,可以得到具有高峰值功率的拍波。由AIP Publishing发布。

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