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Numerical studies of a plasma diode with external forcing

机译:带外力等离子体二极管的数值研究

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With reference to laboratory Q-machine studies we analyze the dynamics of a plasma diode under external forcing. Assuming a strong axial magnetic field, the problem is analyzed in one spatial dimension by a particle-in-cell code. The cathode is assumed to be operated in electron rich conditions, supplying an abundance of electrons. We compare different forcing schemes with the results obtained by solving the van der Pol equation. In one method of forcing we apply an oscillation in addition to the DC end plate bias and consider both amplitude and frequency variations. An alternative method of perturbation consists of modelling an absorbing grid at some internal position. Also in this case we can have a constant frequency with varying amplitude or alternatively an oscillation with chirped frequency but constant amplitude. We find that the overall features of the forced van der Pol equation are recovered, but the details in the plasma response need more attention to the harmonic responses, requiring extensions of the model equation. The analysis is extended by introducing collisional effects, where we emphasize charge exchange collisions of ions, since these processes usually have the largest cross sections and give significant modifications of the diode performance. In particular we find a reduction in oscillator frequency, although a linear scaling of the oscillation time with the system length remains also in this case.
机译:参考实验室Q机研究,我们分析了在外力作用下等离子二极管的动力学。假设有一个强大的轴向磁场,则通过单元格内粒子代码在一个空间维度上分析问题。假定阴极在富电子条件下工作,提供大量电子。我们将不同的强迫方案与通过解决van der Pol方程获得的结果进行比较。在一种强制方法中,我们除了施加直流端板偏置外还施加振荡,并同时考虑幅度和频率变化。摄动的另一种方法是在某个内部位置对吸收网格进行建模。同样在这种情况下,我们可以具有一个振幅可变的恒定频率,或者具有chi频率但振幅恒定的振荡。我们发现强制范德波尔方程的整体特征得以恢复,但等离子体响应的细节需要更多地关注谐波响应,因此需要对模型方程进行扩展。通过引入碰撞效应扩展了分析,在碰撞效应中我们强调了离子的电荷交换碰撞,因为这些过程通常具有最大的横截面并显着改变了二极管的性能。特别是,我们发现振荡器频率降低了,尽管在这种情况下,振荡时间与系统长度的线性比例也保持不变。

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