Binding energy of charged excitons in semiconductor quantum wells in the presence of longitudinal electric fields - art. no. 115324

摘要

We present variational calculations of the binding energy for positively and negatively charged excitons (trions) in idealized GaAs/Al0.3Ga0.7As quantum wells with parabolic electrons and holes energy dispersions. The configuration interaction method is used with a physically meaningful single-particle basis set. We have shown that the inclusion of more than one electron quantum-well solution in the basis is important to obtain accurate values for the binding energies. The effects of longitudinal electric-field and quantum-well confinement on the charged excitons bound states are studied in the absence of magnetic field and the conditions for the trion ionization are discussed. [References: 21]