Influence of p-n junction formation at a Si/Si : Er interface on low-temperature excitation of Er3+ ions in crystalline silicon - art. no. 132202

摘要

The characteristic lambda = 1.54 mum emission of Er3+ ions implanted into a silicon wafer is excited by an Ar laser pointed at the nonimplanted side of the sample. In this experimental configuration energy has to be transferred across the bulk of the crystal, of approximately 350 mum thickness, before reaching the Er-doped layer. Effects related to the presence of a p-n junction formed by Er doping at the Si/Si:Er interface are consistently explained assuming that excitons are responsible for 4f-electron core excitation of the Er3+ ions in crystalline silicon at low temperatures. [References: 15]