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首页> 外文期刊>Physical Review, B. Condensed Matter >Dependence of the band structure on the order parameter for partially ordered GaxIn1-xP alloys - art. no. 201312
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Dependence of the band structure on the order parameter for partially ordered GaxIn1-xP alloys - art. no. 201312

机译:能带结构对部分有序GaxIn1-xP合金的有序参数的依赖性-艺术没有。 201312

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摘要

An empirical pseudopotential method is demonstrated for realistically and accurately calculating the band structure of partially CuPt ordered GaxIn1-xP alloys. A sufficiently large supercell of similar to 3500 atoms, with all atomic positions relaxed by applying a valence force field method, is used to simulate the (Ga,In) distribution in the partially ordered alloy with the order parameter eta varying from 0 to 1. While agreeing very well with experimental data in the experimentally verifiable region eta <0.5, our results illustrate that a commonly accepted interpolation scheme (i.e., the (2) rule) is grossly inaccurate for determining certain primary band structure parameters (e.g., the band gap) between eta =0 and eta =1. [References: 35]
机译:实验证明了一种伪拟势方法,可以真实,准确地计算部分CuPt有序GaxIn1-xP合金的能带结构。一个足够大的,类似于3500个原子的超晶胞,通过应用化合价场方法放松了所有原子的位置,被用来模拟部分有序合金中(Ga,In)的分布,其有序参数eta在0到1之间变化。尽管与实验可验证区域eta <0.5中的实验数据非常吻合,但我们的结果表明,对于确定某些主频带结构参数(例如, eta = 0和eta = 1之间的带隙)。 [参考:35]

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