Electric-field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique

摘要

Positron-lifetime spectroscopy has been used to investigate the electric-field distribution occurring at the Au-semi-insulating GaAs interface. Positrons implanted from a Na-22 source and drifted back to the interface are detected through their characteristic lifetime at interface traps. The relative intensity of this fraction of interface-trapped positrons reveals that the field strength in the depletion region saturates at applied biases above 50 V, an observation that cannot be reconciled with a simple depletion approximation model. The data, are, however, shown to be fully consistent with recent direct electric-field measurements and the theoretical model proposed by McGregor et al. [J Appl. Phys. 75, 7910 (1994)] of an enhanced EL2(+) electron-capture cross section above a critical electric field that causes a dramatic reduction of the depletion region's net charge density. Two theoretically derived electric field profiles, together with an experimentally based profile, are used to estimate a positron mobility of similar to 95 +/- 35 cm(2) V-l S-I under the saturation field. This value is higher than previous experiments would suggest, and reasons for this effect are discussed. [S0163-1829 (99)05008-0]. [References: 30]