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首页> 外文期刊>Physical Review, A. Atomic, molecular, and optical physics >Electric-field sensing near the surface microstructure of an atom chip using cold Rydberg atoms
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Electric-field sensing near the surface microstructure of an atom chip using cold Rydberg atoms

机译:使用冷Rydberg原子感测原子芯片表面微观结构附近的电场

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摘要

The electric fields near the heterogeneous metal-dielectric surface of an atom chip were measured using cold atoms. The atomic sensitivity to electric fields was enhanced by exciting the atoms to Rydberg states that are 108 times more polarizable than the ground state. We attribute the measured fields to charging of the insulators between the atom chip wires. Surprisingly, it is found that although the chip wire currents were turned off before Rydberg excitation, the measured fields were strongly influenced by how the wire currents had been applied. These fields may be dramatically lowered with appropriate voltage biasing, suggesting configurations for the future development of hybrid quantum systems.
机译:使用冷原子测量原子芯片异质金属介电表面附近的电场。通过激发原子进入雷德堡态,极化强度是基态的108倍,从而增强了对电场的原子敏感性。我们将测量场归因于原子芯片导线之间绝缘体的充电。令人惊讶地发现,尽管在里德伯格激发之前关闭了芯片线电流,但是所测量的场受到线电流施加方式的强烈影响。通过适当的电压偏置,这些场可能会大大降低,这为混合量子系统的未来发展提供了建议。

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