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Electric field sensing near the surface microstructure of an atom chip using cold Rydberg atoms

机译:使用冷里德堡原子感测原子芯片表面微观结构附近的电场

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摘要

This thesis reports experimental observations of electric fields using Rydberg atoms, including dc field measurements near the surface of an atom chip, and demonstration ofmeasurement techniques for ac fields far from the surface. Associated theoretical resultsare also presented, including Monte Carlo simulations of the decoherence of Rydberg statesin electric field noise as well as an analytical calculation of the statistics of dc electric fieldinhomogeneity near polycrystalline metal surfaces.DC electric fields were measured near the heterogeneous metal and dielectric surface ofan atom chip using optical spectroscopy on cold atoms released from the trapping potential.The fields were attributed to charges accumulating in the dielectric gaps between the wireson the chip surface. The field magnitude and direction depend on the details of the dcbiasing of the chip wires, suggesting that fields may be minimized with appropriate biasing.Techniques to measure ac electric fields were demonstrated far from the chip surface,using the decay of a coherent superposition of two Rydberg states of cold atoms. We haveused the decay of coherent Rabi oscillations to place some bounds on the magnitude andfrequency dependence of ac field noise.The rate of decoherence of a superposition of two Rydberg states was calculated withMonte Carlo simulations. The states were assumed to have quadratic Stark shifts and thepower spectrum of the electric field noise was assumed to have a power-law dependenceof the form 1/f^κ. The decay is exponential at long times for both free evolution of thesuperposition and and Hahn spin-echo sequences with a π refocusing pulse applied toeliminate the effects of low-frequency field noise. This decay time may be used to calculatethe magnitude of the field noise if κ is known.The dc field inhomogeneity near polycrystalline metal surfaces due to patch potentialson the surface has been calculated, and the rms field scales with distance to the surface as1/z^2. For typical evaporated metal surfaces the magnitude of the rms field is comparableto the image field of an elementary charge near the surface.
机译:本文报道了使用里德堡原子进行电场的实验观察,包括在原子芯片表面附近的直流场测量,以及对远离表面的交流场的测量技术的演示。还提供了相关的理论结果,包括雷德堡态在电场噪声中的退相干性的蒙特卡罗模拟以及对多晶金属表面附近的直流电场不均匀性统计数据的解析计算。原子光谱法是利用从捕获势中释放出的冷原子对光谱进行分析的方法。这些场归因于电荷积聚在芯片表面导线之间的电介质间隙中。场的大小和方向取决于芯片导线的直流偏置的细节,这表明可以通过适当的偏置来最小化场。利用两个相干叠加的衰减,在远离芯片表面的地方展示了用于测量交流电场的技术。里德堡的冷原子态。我们利用相干拉比振荡的衰减为交流场噪声的幅度和频率依赖性设定了一定的界限。通过蒙特卡罗模拟计算了两个里德堡态叠加的退相干率。假定状态具有二次斯塔克频移,并且假定电场噪声的功率谱具有1 / f ^κ形式的幂律相关性。对于叠加和哈恩自旋回波序列的自由演化,通过施加π重聚焦脉冲以消除低频场噪声的影响,衰减在长时间内是指数级的。如果已知κ,则可以使用该衰减时间来计算场噪声的大小。已经计算了多晶金属表面附近由于补丁电位而产生的dc场不均匀性,并且rms场与到表面的距离成比例缩放为1 / z ^ 2。对于典型的蒸发金属表面,rms场的大小与表面附近的基本电荷的像场相当。

著录项

  • 作者

    Carter Jeffrey David;

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  • 年度 2013
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  • 原文格式 PDF
  • 正文语种 en
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