...
首页> 外文期刊>PHYSICAL REVIEW A >Electric-field sensing near the surface microstructure of an atom chip using cold Rydberg atoms
【24h】

Electric-field sensing near the surface microstructure of an atom chip using cold Rydberg atoms

机译:使用冷Rydberg原子的原子芯片表面微观结构附近的电场感应

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

The electric fields near the heterogeneous metal-dielectric surface of an atom chip were measured using coldnatoms. The atomic sensitivity to electric fields was enhanced by exciting the atoms to Rydberg states that aren108 times more polarizable than the ground state. We attribute the measured fields to charging of the insulatorsnbetween the atom chip wires. Surprisingly, it is found that although the chip wire currents were turned off beforenRydberg excitation, the measured fields were strongly influenced by how the wire currents had been applied.nThese fields may be dramatically lowered with appropriate voltage biasing, suggesting configurations for thenfuture development of hybrid quantum systems.
机译:使用冷原子测量原子芯片异质金属介电表面附近的电场。通过激发原子到里德堡态极化比基态高108倍,提高了原子对电场的敏感性。我们将测量的场归因于原子芯片导线之间的绝缘子的充电。令人惊讶的是,发现尽管芯片线电流在nRydberg激励之前已被关闭,但所测量的场强受到线电流的施加方式的影响.n这些场在适当的电压偏置下可能会显着降低,这表明了未来混合动力的发展配置量子系统。

著录项

  • 来源
    《PHYSICAL REVIEW A》 |2012年第5期|1-7|共7页
  • 作者单位

    Department of Physics and Astronomy and Institute for Quantum Computing University of Waterloo Waterloo Ontario Canada N2L 3G1;

    Department of Physics and Astronomy and Institute for Quantum Computing University of Waterloo Waterloo Ontario Canada N2L 3G1;

    Department of Physics and Astronomy and Institute for Quantum Computing University of Waterloo Waterloo Ontario Canada N2L 3G1;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号