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首页> 外文期刊>Physical Review, A. Atomic, molecular, and optical physics >Absolute K-shell ionization cross sections and L alpha and L beta(1) x-ray production cross sections of Ga and As by 1.5-39-keV electrons
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Absolute K-shell ionization cross sections and L alpha and L beta(1) x-ray production cross sections of Ga and As by 1.5-39-keV electrons

机译:1.5-39-keV电子对Ga和As的绝对K壳电离截面和L alpha和L beta(1)X射线产生截面

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摘要

Absolute K-shell ionization and L alpha and L beta(1) x-ray production cross sections for Ga and As have been measured for incident electrons in the energy range from 1.5 to 39 keV. The cross sections were deduced from K alpha, L alpha, and L beta(1) x-ray intensities emitted from ultrathin GaAs samples deposited onto self-supporting carbon films. The x-ray intensities were measured on an electron microprobe equipped with several wavelength-dispersive spectrometers and were converted into absolute cross sections by using estimated values of the target thickness, spectrometer efficiency, and number of incident electrons. Experimental results are compared with cross sections calculated from the plane-wave and distorted-wave Born approximations, the relativistic binary-encounter-Bethe model, the results of two widely used simple analytical formulas, and, whenever possible, experimental data from the literature.
机译:对于能量在1.5至39 keV范围内的入射电子,已测量了Ga和As的绝对K壳电离以及L alpha和L beta(1)X射线产生的横截面。从沉积在自支撑碳膜上的超薄GaAs样品发出的K alpha,L alpha和L beta(1)X射线强度推导得出截面。在配备有多个波长色散光谱仪的电子探针上测量X射线强度,并通过使用目标厚度,光谱仪效率和入射电子数的估计值将其转换为绝对截面。将实验结果与从平面波和畸变波Born近似,相对论二元对偶Bethe模型,两个广泛使用的简单分析公式的结果以及在可能的情况下从文献中获得的实验数据计算出的横截面进行比较。

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