Electron localization in an asymmetric double quantum well nanostructure (II):Improvement via Fano-type interference

摘要

This letter explores the one dimensional (1D) and two-dimensional (2D) position dependent probe absorption spectrum in a four-subband semiconductor quantum-well (QW) system in presence of Fano-type interference. Compared with obtained results for the maximal detecting probability of electron in Hamedi (2014. Physica B 440, 83) which was 50%, in this paper, we show that the detecting probability and precision of electron localization in one period can be significantly improved and reaches to 100% at the origin of coordinates, through proper tuning the strength of Fano-type interference. Also, the influence of other controlling parameters on the localization behavior of the QW system is discussed. The obtained results may provide some new possibilities for technological applications in laser cooling or nanolithography via high-precision and high-resolution electron localization.