Structural and magnetic properties of Co+ implanted n-GaN dilute magnetic semiconductors

摘要

The n-type GaN epilayer was grown on sapphire prepared by metal organic chemical vapour deposition and subsequently Co~+ ions implanted. The properties of Co~+ ions implanted GaN epilayer were investigated by structural and magnetic measurements. The results of Rutherford backscattering spectrometry and channeling illustrate that an excellent crystalline quality (X_(min)=1.3%) of as-grown GaN. After the implantation of 150 keV Co~+ ions with dose 3×10~(16) cm~2 into GaN and subsequently annealed at 700, 800 and 900 1C, no secondary phase or metal related-peaks were detected by typical XRD. In addition high-resolution X-ray diffraction (HRXRD) was performed to study structural related properties. The magnetization curves were obtained by SQUID and AGM measurements, a well-defined hysteresis loop was observed even at 300 K. The temperature dependence of magnetization was taken in FC and ZFC conditions showed the highest Curie temperature (T_C) -3170 K recorded for Co~+ implanted GaN.