On the theory of classical cyclotron resonance line broadening in two- and three-dimensional semiconductors

摘要

A broadening of the absorption line of the classical cyclotron resonance (CR) in two- and three-dimensional semiconductors with neutral impurities of arbitrary depth is investigated. A dependence of the half-width of the classical CR line on the impurity characteristics (depth and range of the potential) is obtained in the wide range of the parameters. The broadening is studied within the Born approximation, and also at resonant and non-resonant scattering. Fundamental differences between the line broadening by neutral impurities in two- and three-dimensional semiconductors are revealed. An alternative explanation of classical experiments on electron scattering by neutral impurities (donors) is proposed.