Phase composition of microdefects in heavily doped n-GaAs

摘要

The phase composition of the microdefects in Te-doped GaAs single crystals grown by the Czochralski technique with a free carrier density n_0=5 x 10~(17)-5 x 10~(18)cm~(-3) was investigated. Ga_2Te_3 phase reflections appeared in the X-ray diffraction patterns. Nonmonotonic dependences of the relative volume fraction and the coherent scattering domain size of Ga_2Te_3 on Te doping level were obtained. The possible causes of the nonmonotonic variation in the structural parameters of the Ga_2Te_3 phase with increase of Te concentration in GaAs are discussed.