X-ray diffraction on precipitates in Czochralski-grown silicon

摘要

The results of a study of oxygen precipitates in Czochralski grown silicon are reported. High-resolution X-ray diffraction was used to measure reciprocal space maps on samples after various annealing treatment. The measurements were performed for several diffraction orders and systematic differences between reciprocal space maps around different diffractions were found. The diffuse X-ray scattering intensity was simulated, where the displacement field of precipitates was calculated using continuum elasticity theory. The simulations give correct asymptotic behavior and the interpretation of intermediate region between Huang and core scattering processes is found. The X-ray diffraction results are correlated to the infrared absorption spectroscopy measurement involving the interstitial oxygen Concentration.