Production of vacancy defects in high-energy Sn-ion irradiated GaN - Positron beam Doppler broadening study

摘要

GaN epilayer grown on Sapphire by MOCVD technique has been irradiated with 75 MeV Sn5+ ions to a fluence of 1 X 10(11), 10(12),10(13) and 10(14)cm(-2) and studied using depth-resolved positron annihilation spectroscopy. High-energy ion-induced defects are found to be Ga mono vacancies, which have been identified from the defect sensitive S-parameter values as well as from R-parameter values, for all fluence beyond 10(11)cm(-2). It is also found that the concentration of vacancy defects increases with ion fluence. (c) 2005 Elsevier B.V. All rights reserved.