Theoretical study of vacancy supersaturation during silicon crystal growth and nitrogen-doping effects

摘要

We performed thermodynamical simulations of the vacancy supersaturation during silicon crystal growth and investigated nitrogen-doping effects on the suppression of void formation and the enhancement of oxygen precipitates. Although the mechanism with the N2V complex has been proposed to explain the suppression, we found that it cannot reproduce the suppression even with nitrogen density as high as 1020 cm(-3). On the other hand, the mechanism with the N2V2 complex can reproduce the suppression with about 10,5 cm(-3) Of nitrogen, which is consistent with the experiments. It also explains the enhancement of oxygen precipitates. Therefore, the N2V2 complex plays the dominant role in the vacancy aggregation process. (c) 2005 Elsevier B.V. All rights reserved.