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Tuning electronic structures of the stanene monolayer via defects and transition-metal-embedding: spin-orbit coupling

机译:通过缺陷和过渡金属嵌入来调整锡单层的电子结构:自旋-轨道耦合

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摘要

The electronic structures and magnetism of defect-and transition metal (TM)-embedded stanene monolayers are investigated by using first-principles methods. Single vacancy (SV) and double vacancy (DV) cannot induce magnetism, while embedding a TM can effectively tune the magnetic moments of the stanene monolayer. Moreover, the results show that all 3d TM-embedded stanene monolayers are stable. The TM-embedded SV is easier to form than DV. For TM-embedded SV systems, the Ti-embedded case presents half-metallic properties. However, for TM-embedded DV systems, the Ti-embedded system is a magnetic semiconductor and spin-orbit coupling (SOC) effects remarkably increase its band gap. Interestingly, the SOC interaction induces electronic phase transition from the semiconductor to the half-metal (metal) for Ni (Zn)-embedded DV systems. These results provide a promising route to design stanene-based spintronics devices.
机译:使用第一性原理方法研究了嵌入有缺陷和过渡金属(TM)的锡单层的电子结构和磁性。单空位(SV)和双空位(DV)不能感应磁性,而嵌入TM可以有效地调整单分子锡的磁矩。此外,结果表明,所有嵌入3d TM的锡单层都是稳定的。嵌入TM的SV比DV更容易形成。对于嵌入TM的SV系统,嵌入Ti的外壳具有半金属性能。但是,对于TM嵌入式DV系统,Ti嵌入式系统是磁性半导体,自旋轨道耦合(SOC)效应显着增加了其带隙。有趣的是,对于嵌入Ni(Zn)的DV系统,SOC相互作用会导致电子从半导体过渡到半金属(金属)。这些结果为设计基于锡的自旋电子器件提供了一条有希望的途径。

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