Enhanced photocurrent density of hematite thin films on FTO substrates: effect of post-annealing temperature

摘要

Fluorine doped tin oxide (FTO) is widely used as a substrate in the synthesis of a photo-reactive semiconductor electrode for solar water splitting. The hematite film on the surface of the FTO substrate annealed at 700 degrees C showed an enhanced photocurrent value with a maximum photocurrent of 0.39 mA cm(-2) at 1.23 V vs. RHE under 1 sun illumination. This is a much enhanced photocurrent value of the hematite films than that of those annealed at temperatures lower than 700 degrees C. This is a promising approach for the enhancement of the photoelectrochemical properties of metal oxide thin films. This work reports on the mechanism of the annealing process of the synthesized hematite film to enhance the photocurrent value. Furthermore, this can be used for the enhanced efficiency of the solar water splitting reaction.