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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Strong second harmonic generation in SiC, ZnO, GaN two-dimensional hexagonal crystals from first-principles many-body calculations
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Strong second harmonic generation in SiC, ZnO, GaN two-dimensional hexagonal crystals from first-principles many-body calculations

机译:通过第一性原理多体计算在SiC,ZnO,GaN二维六角形晶体中产生强大的二次谐波

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The second harmonic generation (SHG) intensity spectrum of SiC, ZnO, GaN two-dimensional hexagonal crystals is calculated by using a real-time first-principles approach based on Green's function theory [Attaccalite et al., Phys. Rev. B: Condens. Matter Mater. Phys. 2013 88, 235113]. This approach allows one to go beyond the independent particle description used in standard first-principles nonlinear optics calculations by including quasiparticle corrections (by means of the GW approximation), crystal local field effects and excitonic effects. Our results show that the SHG spectra obtained using the latter approach differ significantly from their independent particle counterparts. In particular they show strong excitonic resonances at which the SHG intensity is about two times stronger than within the independent particle approximation. All the systems studied (whose stabilities have been predicted theoretically) are transparent and at the same time exhibit a remarkable SHG intensity in the range of frequencies at which Ti: sapphire and Nd: YAG lasers operate; thus they can be of interest for nanoscale nonlinear frequency conversion devices. Specifically the SHG intensity at 800 nm (1.55 eV) ranges from about 40-80 pm V-1 in ZnO and GaN to 0.6 nm V-1 in SiC. The latter value in particular is 1 order of magnitude larger than values in standard nonlinear crystals.
机译:SiC,ZnO,GaN二维六方晶体的二次谐波产生(SHG)强度谱是基于格林函数理论[Attaccalite et al。,Phys。版本B:冷凝。物质。物理2013 88,235113]。通过包括准粒子校正(借助于GW近似),晶体局部场效应和激子效应,该方法使人们能够超越标准第一原理非线性光学计算中使用的独立粒子描述。我们的结果表明,使用后一种方法获得的SHG光谱与其独立的颗粒对应物显着不同。特别是,它们显示出强大的激子共振,在这种情况下,SHG强度比独立粒子近似中的强度高大约两倍。所有研究的系统(理论上已经预测了其稳定性)都是透明的,同时在Ti:蓝宝石激光器和Nd:YAG激光器工作的频率范围内表现出显着的SHG强度。因此,它们对于纳米级非线性频率转换设备可能是有意义的。具体而言,在800 nm(1.55 eV)处的SHG强度范围从ZnO和GaN中的约40-80 pm V-1到SiC中的0.6 nm V-1。尤其是后者的值比标准非线性晶体中的值大1个数量级。

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