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Tuning the electronic and optical properties of graphene and boron-nitride quantum dots by molecular charge-transfer interactions: a theoretical study

机译:通过分子电荷转移相互作用调节石墨烯和氮化硼量子点的电子和光学性质:一项理论研究

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Spin-polarized first-principles calculations have been performed to tune the electronic and optical properties of graphene (G) and boron-nitride (BN) quantum dots (QDs) through molecular charge-transfer using tetracyanoquinodimethane (TCNQ) and tetrathiafulvalene (TTF) as dopants. From our results, based on the formation energy and the distance between QDs and dopants, we infer that both the dopants are physisorbed on the QDs. Also, we find that GQDs interact strongly with the dopants compared to the BNQDs. Interestingly, although the dopants are physisorbed on QDs, their interactions lead to a decrement in the HOMO-LUMO gap of QDs by more than half of their original value. We have found a spin-polarized HOMO-LUMO gap in certain QD-dopant complexes. Mulliken population analysis, generation of density of states (DOS) and projected DOS (pDOS) plots, and optical conductivity calculations have been performed to support and understand the reasons behind our findings.
机译:通过使用四氰基喹二甲烷(TCNQ)和四硫富瓦烯(TTF)作为分子电荷转移来进行自旋极化的第一性原理计算,以调节石墨烯(G)和氮化硼(BN)量子点(QDs)的电子和光学性质。掺杂剂。根据我们的结果,基于形成能和量子点与掺杂物之间的距离,我们推断两种掺杂物都被物理吸附在量子点上。此外,我们发现与BNQD相比,GQD与掺杂剂之间的相互作用很强。有趣的是,尽管掺杂物被物理吸附在量子点上,但是它们的相互作用导致量子点的HOMO-LUMO间隙减小了其原始值的一半以上。我们发现在某些QD掺杂物复合物中存在自旋极化的HOMO-LUMO间隙。进行了Mulliken总体分析,状态密度(DOS)和投影DOS(pDOS)图的生成以及光导率计算,以支持和理解我们的发现背后的原因。

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