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首页> 外文期刊>Synthetic Metals >Material- and process-effects on homogeneity and electric properties of transparent conducting films composed of hydrazine-reduced graphene oxide and/or silver nanowire
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Material- and process-effects on homogeneity and electric properties of transparent conducting films composed of hydrazine-reduced graphene oxide and/or silver nanowire

机译:材料和工艺对由肼还原的氧化石墨烯和/或银纳米线组成的透明导电膜的均匀性和电性能的影响

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摘要

Photomicroscope observation of hydrazine-reduced graphene oxide (h-rGO) films indicates that the films prepared by spin-coating are more homogeneous than those prepared by dip-coating. Graphene oxide (GO) is apt to aggregate during the dipping process. Increasing rotation speed of the spin-coating decreased film thickness and increased surface resistant (Rs). Rs of small-sized h-rGO(BF1A) was smaller than that of large-sized h-rGO(NiSiNa). The h-rGO(NiSiNa) films prepared with a rotation number smaller than 2000 rpm had wrinkles about 5 nm in height and particles with about 15 nm height. The rotation number of 3000 rpm decreased the wrinkles and particles resulting in smaller Rs. Increasing the hydrazine-treatment temperature from 90 to 140 degrees C caused the Rs values to decrease. Work-function values of h-rGO(NiSiNa) were 3.6-3.8 eV; smaller than those of other h-rGOs. Larger ratio of pyrrolic nitrogen to oxygen-bound nitrogen gave smaller WF values. Silver nanowire (AgNW) films prepared by multiple spin-coating processes showed small Rs vales and small Rs deviations. Mechanical pressing at 100 degrees C made the thickness of AgNW films equal to the AgNW diameter and decreased the Rs values. Polymer (Cytop) was coated on the AgNW films and the h-rGO/AgNW/Cytop transparent conducting film was peeled off. The arithmetic average roughness of the h-rGO surface was 1.2 nm. (C) 2016 Elsevier B.V. All rights reserved.
机译:用光学显微镜观察肼还原的氧化石墨烯(h-rGO)薄膜表明,旋涂制备的薄膜比浸涂制备的薄膜更均匀。氧化石墨烯(GO)在浸渍过程中易于聚集。旋涂的旋转速度的增加降低了膜的厚度并增加了表面电阻(Rs)。小型h-rGO(BF1A)的Rs小于大型h-rGO(NiSiNa)。转数小于2000rpm的h-rGO(NiSiNa)膜具有约5nm高的褶皱和约15nm高的颗粒。 3000 rpm的转速减少了皱纹和颗粒,从而减小了Rs。将肼处理温度从90摄氏度提高到140摄氏度导致Rs值降低。 h-rGO(NiSiNa)的功函数值为3.6-3.8 eV;比其他h-rGO小。较高的吡咯氮与结合氧的氮比例产生较小的WF值。通过多次旋涂工艺制备的银纳米线(AgNW)膜显示较小的Rs值和较小的Rs偏差。在100摄氏度下机械加压使AgNW膜的厚度等于AgNW直径,并降低了Rs值。将聚合物(Cytop)涂覆在AgNW膜上,并剥离h-rGO / AgNW / Cytop透明导电膜。 h-rGO表面的算术平均粗糙度为1.2nm。 (C)2016 Elsevier B.V.保留所有权利。

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