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Low-voltage organic n-channel thin-film transistors based on a core-cyanated perylene tetracarboxylic diimide derivative

机译:基于氰化per四羧酸二酰亚胺衍生物的低压有机n沟道薄膜晶体管

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摘要

Using the small-molecule organic semiconductor bis(1H,1H-perfIuorobutyl)-dicyano-perylene tetracarboxylic diimide, C_3F_7CH_2-PTCDI-(CN)_2, and a low-temperature-processed, high-capacitance gate dielectric based on a phosphonic acid self-assembled monolayer, we have manufactured n-channel thin-film transistors on glass substrates. The transistors operate with low voltages (2 V) and have an electron mobility of 0.04 cm~2/Vs and an on/off ratio of 10~5. By combining C_3F_7CH_2-PTCDOI-(CN)_2 n-channel transistors with pentacene p-channel transistors, we have also manufactured low-voltage, low-power organic complementary inverters with good static and dynamic performance.
机译:使用小分子有机半导体双(1H,1H-全氟丁基)-二氰基-ylene四羧酸二酰亚胺,C_3F_7CH_2-PTCDI-(CN)_2和基于膦酸自身的低温处理的高电容栅极电介质组装单层后,我们在玻璃基板上制造了n沟道薄膜晶体管。晶体管在低电压(2 V)下工作,电子迁移率为0.04 cm〜2 / Vs,开/关比为10〜5。通过将C_3F_7CH_2-PTCDOI-(CN)_2 n沟道晶体管与并五苯p沟道晶体管相结合,我们还制造了具有良好静态和动态性能的低压,低功率有机互补逆变器。

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