机译:基于萘四羧酸二酰亚胺的高迁移率,空气稳定,低压有机n沟道薄膜晶体管的接触特性
Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany;
Institute for Microelectronics Stuttgart (IMS CHIPS), Allmandring 30a, 70569 Stuttgart, Germany;
Institute for Microelectronics Stuttgart (IMS CHIPS), Allmandring 30a, 70569 Stuttgart, Germany,Institute for Nano- and Microelectronic Systems (INES), University of Stuttgart, 70569 Stuttgart, Germany;
Institute for Microelectronics Stuttgart (IMS CHIPS), Allmandring 30a, 70569 Stuttgart, Germany,Institute for Nano- and Microelectronic Systems (INES), University of Stuttgart, 70569 Stuttgart, Germany;
Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany;
Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany;
Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany,Institut de Physique de la Matiere Condensee, Ecole Polytechnique Federate de Lausanne, 1015 Lausanne, Switzerland;
Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany;
机译:高迁移率的空气稳定的萘二酰亚胺基共聚物,包含扩展的π共轭结构,用于n沟道有机场效应晶体管
机译:基于核心氯化萘二酰亚胺的高迁移率空气稳定溶液剪切处理的n沟道有机晶体管
机译:基于氰化per四羧酸二酰亚胺衍生物的低压有机n沟道薄膜晶体管
机译:基于二氯化萘二酰亚胺的有机n沟道薄膜晶体管
机译:分子间相互作用对萘四羧酸二亚胺薄膜形态的影响
机译:结合使用萘二酰亚胺和富勒烯衍生物以产生n型有机薄膜晶体管的有机半导体
机译:高迁移率的萘二酰亚胺和硒基-亚乙烯基-硒基的共轭聚合物:n沟道有机场效应晶体管及其结构-性能关系
机译:聚合物基板上的高迁移率碳纳米管薄膜晶体管。