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Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application

机译:高工作温度应用II型超晶格MWIR少数载流子单极成像仪的演示

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摘要

An InAs/GaSb type-II superlattice-based mid-wavelength infrared (MWIR) 320 x 256 unipolar focal plane array (FPA) using pMp architecture exhibited excellent infrared image from 81 to 150 K and similar to 98% operability, which illustrated the possibility for high operation temperature application. At 150 K and -50 mV operation bias, the 27 mu m pixels exhibited dark current density to be 1.2 x 10(-5) A/cm(2), with 50% cutoff wavelength of 4.9 mu m, quantum efficiency of 67% at peak responsivity (4.6 mu m), and specific detectivity of 1.2 x 10(12) Jones. At 90 K and below, the 27 mu m pixels exhibited system limited dark current density, which is below 1 x 10(-9) A/cm(2), and specific detectivity of 1.5 x 10(14) Jones. From 81 to 100 K, the FPA showed similar to 11 mK NEDT by using F/2.3 optics and a 9.69 ms integration time. (C) 2014 Optical Society of America.
机译:使用pMp架构的基于InAs / GaSb II型超晶格的中波红外(MWIR)320 x 256单极焦平面阵列(FPA)在81至150 K的范围内显示出出色的红外图像,可操作性接近98%,这说明了可能性适用于高工作温度应用。在150 K和-50 mV的工作偏压下,27μm像素的暗电流密度为1.2 x 10(-5)A / cm(2),50%的截止波长为4.9μm,量子效率为67%在峰值响应度(4.6微米)和1.2 x 10(12)Jones的比检测率下。在90 K或以下时,这27μm像素显示出系统限制的暗电流密度,该密度低于1 x 10(-9)A / cm(2),比检测率为1.5 x 10(14)Jones。从81到100 K,通过使用F / 2.3光学器件和9.69 ms的积分时间,FPA显示出类似于11 mK NEDT。 (C)2014年美国眼镜学会。

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