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Subnanosecond Tm:KLuW microchip laser Q-switched by a Cr:ZnS saturable absorber

机译:亚纳秒Tm:KLuW微芯片激光器由Cr:ZnS饱和吸收剂进行Q开关

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Passive Q-switching of a compact Tm:KLu(WO4)(2) microchip laser diode pumped at 805 nm is demonstrated with a polycrystalline Cr2+:ZnS saturable absorber. This laser generates subnanosecond (780 ps) pulses with a pulse repetition frequency of 5.6 kHz at 1846.6 nm, the shortest pulse duration ever achieved by Q-switching of similar to 2 mu m lasers. The maximum average output power is 146 mW with a slope efficiency of 21% with respect to the absorbed power. This corresponds to a pulse energy of 25.6 mu J and a peak power of 32.8 kW. (C) 2015 Optical Society of America
机译:紧凑型Tm:KLu(WO4)(2)微芯片激光二极管在805 nm泵浦下的无源Q开关已通过多晶Cr2 +:ZnS饱和吸收体进行了演示。该激光器在1846.6 nm处产生亚纳秒(780 ps)脉冲,其脉冲重复频率为5.6 kHz,这是通过类似于2μm激光器的Q开关实现的最短脉冲持续时间。最大平均输出功率为146 mW,相对于吸收功率的斜率效率为21%。这对应于25.6μJ的脉冲能量和32.8 kW的峰值功率。 (C)2015年美国眼镜学会

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