Enhanced performances of InGaN/GaN-based blue LED with an ultra-thin inserting layer between GaN barriers and InGaN wells

摘要

The advantages of ultra-thin inserting layer (UTL) on the performances of InGaN/GaN-based blue light-emitting diode (LED) are investigated both experimentally and numerically. The fabricated LED with UTL exhibits smaller emission energy shift, lower forward voltage, and larger radiative recombination rates compared with those of conventional LED. Based on our analyses, these advantages are mainly attributed to the improvement of crystalline quality and the alleviation of polarization field in the active region and also higher hole injection efficiency. Meanwhile, the efficiency droop can be mitigated and the light output power can be improved when the UTL is adopted.