Interband photorefractive effect in semiconductors with hot-electron transport at arbitrary modulation depth

摘要

Hot-electron transport in photorefractive semiconductors strongly affects the recording of photorefractive grating. However, the theoretical description of this behavior has been always made under small signal approximation. In this paper rigorous numerical investigation of stationary and transient behavior of photorefractive grating induced in the semiconductor quantum wells structure is presented. The calculations were performed in the framework of the band transport model for the case of high modulation depth. The comparison between numerical and approximated analytical solutions is given as well as between linear and nonlinear transport model. Obtained results allow to verify some statement formulated in few earlier works concerning beneficial effects of electron transport nonlinearity.