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首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Nucleation, Growth Mechanism, and Controlled Coating of ZnO ALD onto Vertically Aligned N-Doped CNTs
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Nucleation, Growth Mechanism, and Controlled Coating of ZnO ALD onto Vertically Aligned N-Doped CNTs

机译:ZnO ALD在垂直排列的N掺杂CNT上的成核,生长机理和受控涂层

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摘要

Zinc oxide thin films were deposited on vertically aligned nitrogen-doped carbon nanotubes (N-CNTs) by atomic layer deposition (ALD) from diethylzinc and water. The study demonstrates that doping CNTs with nitrogen is an effective approach for the "activation" of the CNTs surface for the ALD of metal oxides. Conformal ZnO coatings are already obtained after 50 ALD cycles, whereas at lower ALD cycles an island growth mode is observed. Moreover, the process allows for a uniform growth from the top to the bottom of the vertically aligned N-CNT arrays. X-ray photoelectron spectroscopy demonstrates that ZnO nucleation takes place at the N-containing species on the surface of the CNTs by the formation of the Zn-N bonds at the interface between the CNTs and the ZnO film.
机译:氧化锌薄膜通过原子层沉积(ALD)从二乙基锌和水中沉积在垂直排列的氮掺杂碳纳米管(N-CNT)上。研究表明,用氮掺杂CNT是有效激活CNTs表面以进行金属氧化物ALD的方法。在50次ALD循环后已经获得了保形的ZnO涂层,而在较低的ALD循环下,观察到了岛状生长模式。此外,该工艺允许从垂直排列的N-CNT阵列的顶部到底部均匀生长。 X射线光电子能谱表明,通过在CNT与ZnO膜之间的界面处形成Zn-N键,ZnO成核在CNT表面上的含N物种处发生。

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