Unipolar resistive switching and tunneling oscillations in isolated Si-SiOx core-shell nanostructure

摘要

Unipolar resistive switching (URS) is observed in isolated Si-SiOx core-shell nanostructures. IV characteristics recorded by a conductive atomic force microscope tip show SET and RESET processes with self compliance behavior. Hopping of carriers through defect states in the high resistance state (HRS) and space charge limited conduction in the low resistance state (LRS) are found to be the dominant carrier transport mechanisms in Si-SiOx core-shell nanostructures. URS between LRS and HRS may be attributed to the transition between hydrogen bridge (Si-HSi) and hydrogen doublet (Si-HH-Si) defects. During RESET process, charge carriers tunnel through the nanostructure giving rise to oscillatory conduction.