...
首页> 外文期刊>Nanotechnology >Room temperature Coulomb blockade effects in Au nanocluster/pentacene single electron transistors
【24h】

Room temperature Coulomb blockade effects in Au nanocluster/pentacene single electron transistors

机译:金纳米簇/并五苯单电子晶体管的室温库仑阻挡效应

获取原文
获取原文并翻译 | 示例

摘要

Single-electron transistors incorporating single similar to 1 nm gold nanocluster (AuNCs) and pentacene as a complex charge transport system have been used to study the quantum Coulomb blockade and its single electron tunnelling behaviour at room temperature (RT) (300 K). Monodisperse ultra-small (0.86 +/- 0.30 nm) AuNCs were deposited by the tilted-target sputtering technique into 12 nm nanogaps fabricated by high-resolution e-beam lithography. Tunnelling resistance was modulated to similar to 10(9) Omega by addition of a pentacene layer, allowing clear observation of quantum staircases and Coulomb oscillations with on/off current modulation ratio of similar to 100 in RT current-voltage measurements. The electron addition energy and average quantized energy level spacing were found to be 282 and 80.4 meV, respectively, which are significantly larger than the thermal energy at 300 K (25.9 meV).
机译:结合了类似于1 nm金纳米团簇(AuNCs)和并五苯的单电子晶体管作为复杂的电荷传输系统,已被用于研究量子库仑阻滞及其在室温(RT)(300 K)下的单电子隧穿行为。通过倾斜靶溅射技术将单分散超小(0.86 +/- 0.30 nm)AuNCs沉积到通过高分辨率电子束光刻技术制造的12 nm纳米间隙中。通过添加并五苯层,将隧道电阻调制为类似于10(9)Omega,从而在RT电流-电压测量中以接近100的开/关电流调制比清晰观察量子阶梯和库仑振荡。发现电子添加能和平均量化能级间距分别为282和80.4 meV,大大大于300 K(25.9 meV)时的热能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号