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首页> 外文期刊>Nanotechnology >Electron transport within transparent assemblies of tin-doped indium oxide colloidal nanocrystals
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Electron transport within transparent assemblies of tin-doped indium oxide colloidal nanocrystals

机译:掺锡氧化铟胶体纳米晶体的透明组件中的电子传输

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摘要

Stripe-like compact assemblies of tin-doped indium oxide (ITO) colloidal nanocrystals (NCs) are fabricated by stop-and-go convective self-assembly (CSA). Systematic evaluation of the electron transport mechanisms in these systems is carried out by varying the length of carboxylate ligands protecting the NCs: butanoate (C-4), octanoate (C-8) and oleate (C-18). The interparticle edge-to-edge distance L-0, along with a number of carbon atoms in the alkyl chain of the coating ligand, are deduced from small-angle x-ray scattering (SAXS) measurements and exhibit a linear relationship with a slope of 0.11 nm per carbon pair unit. Temperature-dependent resistance characteristics are analyzed using several electron transport models: Efros-Shklovskii variable range hopping (ES-VRH), inelastic cotunneling (IC), regular island array and percolation. The analysis indicated that the first two models (ES-VRH and IC) fail to explain the observed behavior, and that only simple activated transport takes place in these systems under the experimental conditions studied (T = 300 K to 77 K). Related transport parameters were then extracted using the regular island array and percolation models. The effective tunneling decay constant beta(eff) of the ligands and the Coulomb charging energy E-C are found to be around 5.5 nm(-1) and 25 meV, respectively, irrespective of ligand lengths. The theoretical tunneling decay constant beta calculated using the percolation model is in the range 9 nm(-1). Electromechanical tests on the ITO nanoparticle assemblies indicate that their sensitivities are as high as similar to 30 and remain the same regardless of ligand lengths, which is in agreement with the constant effective beta(eff) extracted from regular island array and percolation models.
机译:通过走走对流自组装(CSA)制造了掺锡的氧化铟(ITO)胶体纳米晶体(NC)的条纹状紧凑组件。通过改变保护NC的羧酸酯配体的长度,可以对系统中的电子传输机理进行系统评估:丁酸酯(C-4),辛酸酯(C-8)和油酸酯(C-18)。从小角度X射线散射(SAXS)测量推导出颗粒间的边缘到边缘的距离L-0以及涂层配体的烷基链中的碳原子数,并且它们与斜率呈线性关系每个碳对单元为0.11 nm。使用几种电子传输模型分析了与温度相关的电阻特性:Efros-Shklovskii可变范围跳跃(ES-VRH),非弹性共隧道(IC),规则岛阵列和渗滤。分析表明,前两个模型(ES-VRH和IC)无法解释观察到的行为,并且在所研究的实验条件下(T = 300 K至77 K),在这些系统中仅发生简单的活化传输。然后使用常规岛阵列和渗滤模型提取相关的运输参数。配体的有效隧穿衰减常数β(eff)和库仑充电能E-C分别约为5.5 nm(-1)和25 meV,与配体长度无关。使用渗滤模型计算出的理论隧道衰变常数β在9 nm(-1)范围内。对ITO纳米粒子组件的机电测试表明,它们的灵敏度与30一样高,并且无论配体长度如何都保持相同,这与从规则岛阵列和渗透模型中提取的恒定有效beta(eff)一致。

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