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Surface Modification and Assembly of Transparent Indium Tin Oxide Nanocrystals for Enhanced Conductivity

机译:透明铟锡氧化物纳米晶体的表面改性和组装,以提高电导率

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In a solution-phase synthesis of nanocrystals (NCs), organic surfactants play an important role in size and shape control as well as in facilitating the stable dispersion of NCs in solvents. However, in order to use these NCs for electrical applications, the surfactants must be removed effectively. Here we report that monodisperse indium tin oxide (ITO) NCs were synthesized and stabilized with oleate/ oleylamine ligands, and these long-chain surfactants were readily substituted with tetrabutylammonium hydroxide (TBAOH), forming a stable methanol dispersion. Uniform assemblies of ITO NCs were made by spin-coating the ITO-TBAOH NC dispersions with an assembly thickness controllable from 68 to 260 nm by the NC solution concentration. An annealing treatment at 120 °C and 300 °C under Ar + 5% H2 for 1 h effectively removed the TBAOH, and the ITO NC assemblies showed high transparency (>88%) and low resistivity (2.6 X 10~(-3) Ω·cm). Our new approach to surface modification of ITO NCs with a volatile surfactant followed by film deposition is an effective strategy for fabricating ITO NC films by a solution process with desired transparency and conductivity for transparent electrode applications.
机译:在纳米晶体(NCs)的溶液相合成中,有机表面活性剂在尺寸和形状控制以及促进NCs在溶剂中稳定分散方面起着重要作用。但是,为了将这些NC用于电气应用,必须有效去除表面活性剂。在这里我们报告说,单分散的铟锡氧化物(ITO)NCs是用油酸酯/油胺配体合成并稳定的,这些长链表面活性剂容易被氢氧化四丁铵(TBAOH)取代,形成稳定的甲醇分散体。通过旋涂ITO-TBAOH NC分散体,制备均匀的ITO NCs组件,组件厚度可通过NC溶液浓度控制在68至260 nm之间。在Ar + 5%H2下于120°C和300°C进行1 h的退火处理有效地去除了TBAOH,并且ITO NC组件显示出高透明度(> 88%)和低电阻率(2.6 X 10〜(-3) Ω·cm)。我们使用挥发性表面活性剂进行ITO NC表面改性然后进行膜沉积的新方法是一种通过溶液工艺制造ITO NC膜的有效策略,该溶液工艺具有透明电极应用所需的透明度和导电性。

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