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Arrays of quasi-hexagonally ordered silica nanopillars with independently controlled areal density, diameter and height gradients

机译:具有独立控制的面密度,直径和高度梯度的准六边形有序二氧化硅纳米柱阵列

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摘要

A consecutive fabrication approach of independently tailored gradients of the topographical parameters distance, diameter and height in arrays of well-ordered nanopillars on smooth SiO2-Si- wafers is presented. For this purpose, previously reported preparation techniques are further developed and combined. First, self-assembly of Au-salt loaded micelles by dip-coating with computer-controlled pulling-out velocities and subsequent hydrogen plasma treatment produce quasi-hexagonally ordered, 2-dimensional arrays of Au nanoparticles (NPs) with unidirectional variations of the interparticle distances along the pulling direction between 50-120 nm. Second, the distance (or areal density) gradient profile received in this way is superimposed with a diameter-controlled gradient profile of the NPs applying a selective photochemical growth technique. For demonstration, a 1D shutter is used for locally defined UV exposure times to prepare Au NP size gradients varying between 12 and 30 nm. Third, these double-gradient NP arrangements serve as etching masks in a following reactive ion etching step delivering arrays of nanopillars. For height gradient generation, the etching time is locally controlled by applying a shutter made from Si wafer piece. Due to the high flexibility of the etching process, the preparation route works on various materials such as cover slips, silicon, silicon oxide, silicon nitride and silicon carbide.
机译:提出了在光滑的SiO2-Si晶片上以良好顺序排列的纳米柱阵列中的地形参数距离,直径和高度的梯度的连续定制方法。为此目的,先前报道的制备技术被进一步开发和组合。首先,通过浸涂计算机控制的拉出速度并随后进行氢等离子体处理,自组装金盐负载的胶束的自组装产生准六边形有序的二维阵列的金纳米粒子(NP),粒子间具有单向变化沿拉动方向的距离在50-120 nm之间。第二,采用选择性光化学生长技术,以这种方式接收的距离(或面密度)梯度分布与NP的直径控制梯度分布叠加。为了演示,将一维快门用于局部定义的UV曝光时间,以制备在12到30 nm之间变化的Au NP尺寸梯度。第三,在随后的反应离子蚀刻步骤中,这些双梯度NP布置用作蚀刻掩模,以传递纳米柱阵列。为了产生高度梯度,通过施加由硅晶片制成的挡板来局部控制蚀刻时间。由于蚀刻工艺的高度灵活性,因此制备工艺适用于各种材料,例如盖玻片,硅,氧化硅,氮化硅和碳化硅。

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