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Discriminative detection of bivalent Cu by dual-emission ZnSe quantum dot fluorescence sensing via ratiometric fluorescence measurements

机译:双发射ZnSe量子点荧光传感通过比率荧光测量判别检测二价铜

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In this work, we showed that 1-thioglycerol (TG)-capped ZnSe quantum dots (QDs) with dualemission could perform ideal QD fluorescence sensing for ratiometric fluorescence measurements. By comparing the fluorescence ratios at two emission peaks before and after the addition of cations, the discriminative detection of Cu(II) was realized, even in the case of coexisting with large amounts of other sensitive cations, such as Ag(I). The discriminative detection of Cu(II) is accurate with co-existing Ag(I) below 10 μmol L~(-1). By a joint investigation of the ionic diffuse dynamics and carrier recombination dynamics, we found that the adsorbed layer of QDs plays a key role in the discriminative detection of Cu(II) from Ag(I) or other sensitive cations. The moderate adsorption capacity with a QD adsorbed layer makes Cu(II) capable of travelling across the QD double-layer structure, following a surface doping process via chemical reactions between Cu(II) and the QD surface atoms. As a result of Cu(II) doping, there were three major carrier recombination channels:the non-radiation recombination between the QD conduction band to the Cu(II) energy level, together with the non-radiation recombination and radiation recombination between the trap state energy levels and the Cu(II) energy level. As for Ag(I) and other sensitive cations, they have a strong adsorption capacity with the QD adsorbed layer, making them mainly present on the adsorbed layer. Due to the blocking of the ligand layer, we only observed weak coupling of the ZnSe conduction band with the Ag(I) energy level via a non-radiation recombination channel.
机译:在这项工作中,我们表明具有双发射的1-巯基甘油(TG)封口的ZnSe量子点(QD)可以执行理想的QD荧光传感,用于比率荧光测量。通过比较添加阳离子前后两个发射峰处的荧光比率,即使在与大量其他敏感阳离子(例如Ag(I))共存的情况下,也可以判别检测Cu(II)。在10μmolL〜(-1)以下共存的Ag(I)时,Cu(II)的判别检测是准确的。通过对离子扩散动力学和载流子复合动力学的联合研究,我们发现QDs的吸附层在从Ag(I)或其他敏感阳离子的Cu(II)的鉴别检测中起关键作用。具有QD吸附层的中等吸附能力使Cu(II)能够通过Cu(II)与QD表面原子之间的化学反应进行表面掺杂处理后,穿越QD双层结构。由于Cu(II)掺杂,存在三个主要的载流子复合通道:QD导带与Cu(II)能级之间的非辐射复合,以及阱之间的非辐射复合和辐射复合状态能级和Cu(II)能级。至于Ag(I)和其他敏感阳离子,它们对QD吸附层的吸附能力强,使其主要存在于吸附层上。由于配体层的阻塞,我们仅观察到ZnSe导带与Ag(I)能级通过非辐射复合通道的弱耦合。

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