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Transfer doping of single isolated nanodiamonds, studied by scanning probe microscopy techniques

机译:通过扫描探针显微镜技术研究单个孤立纳米金刚石的转移掺杂

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摘要

The transfer doping of diamond surfaces has been applied in various novel two-dimensional electronic devices. Its extension to nanodiamonds (ND) is essential for ND-based applications in many fields. In particular, understanding the influence of the crystallite size on transfer doping is desirable. Here, we report the results of a detailed study of the electronic energetic band structure of single, isolated transfer-doped nanodiamonds with nanometric resolution using a combination of scanning tunneling spectroscopy and Kelvin force microscopy measurements. The results show how the band gap, the valence band maximum, the electron affinity and the work function all depend on the ND's size and nanoparticle surface properties. The present analysis, which combines information from both scanning tunneling spectroscopy and Kelvin force microscopy, should be applicable to any nanoparticle or surface that can be measured with scanning probe techniques.
机译:金刚石表面的转移掺杂已应用于各种新颖的二维电子设备中。它对纳米金刚石(ND)的扩展对于许多领域中基于ND的应用至关重要。特别地,需要了解微晶尺寸对转移掺杂的影响。在这里,我们报告的详细研究结果的单个,孤立的转移掺杂纳米金刚石的电子能带结构与扫描隧道光谱法和开尔文力显微镜测量相结合的纳米分辨率。结果表明,带隙,价带最大值,电子亲和力和功函数如何均取决于ND的大小和纳米粒子的表面性质。本分析结合了扫描隧道光谱和开尔文力显微镜的信息,应适用于可以用扫描探针技术测量的任何纳米粒子或表面。

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