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Low-temperature growth of multiple-stack high-density ZnO nanoflowersanorods on plastic substrates

机译:塑料基材上多堆叠高密度ZnO纳米花/纳米球的低温生长

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摘要

Reported here is the low-temperature growth of multiple-stack high-density ZnO nanofloweranorod structures on polyethylene naphthalate (PEN) substrates derived from the surface modification of ZnO seed layers using an atmospheric-pressure plasma jet (APPJ) treatment. The plasma treatment could provide several advantages to the growth of multiple-stack ZnO nanofloweranorod structures: (i)the surface wettability of the seed layers changes from hydrophobic to hydrophilic, resulting in higher surface energies for the growth of high-density ZnO nanoflowers, (ii)the nucleation sites increase due to the increased surface roughness caused by the plasma etching, and (iii)there is no thermal damage to the plastic substrate from the plasma treatment due to its low-temperature weakly ionized discharge. It was also confirmed that multiple stacks of ZnO nanoflowers were obtained without degradation of the crystal quality or modification to the crystal shape or phase. The ZnO nanofloweranorod structures grew by lengths up to 4μm due to an increased surface roughness of 10% and surface energy 5.5 times that of the seed layers. As shown, the APPJ is a very good method to obtain high-density ZnO nanostructures on plastic substrates below 150°C, as is critical for flexible electronics.
机译:此处报道的是在常压等离子体射流(APPJ)处理的ZnO种子层的表面改性衍生的聚萘二甲酸乙二醇酯(PEN)衬底上的多层高密度ZnO纳米花/纳米节结构的低温生长。等离子体处理可以为多层ZnO纳米花/纳米结构的生长提供几个优势:(i)种子层的表面可湿性从疏水性变为亲水性,从而为高密度ZnO纳米花的生长产生了更高的表面能。 ;(ii)由于等离子体刻蚀导致的表面粗糙度增加,成核位置增加,并且(iii)由于低温弱电离放电,等离子体处理对塑料基板没有热损伤。还证实了在不降低晶体质量或不改变晶体形状或相的情况下获得了多层ZnO纳米花。由于增加了10%的表面粗糙度和5.5倍于种子层的表面能,ZnO纳米花/纳米节结构的长度增长至4μm。如图所示,APPJ是一种非常好的方法,可在低于150°C的塑料基板上获得高密度的ZnO纳米结构,这对柔性电子学至关重要。

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